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| 2N3904 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Silicon General Purpose Transistor TO-92 COLLECTOR 3 FEATURES 2 BASE 1 EMITTER 1 2 3 . Power Dissipation PCM: 625 mW (Ta=25 ) . Collector Current ICM: 200 mA . Collector - Base Voltage V(BR)CBO: 60 V ELECTRICAL CHARACTERISTICS (TA = 25 Parameter Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Transition Frequency Operating and Storage Junction Temperature Range SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT TJ, TSTG unless otherwise specified) Min. 40 60 6 100 60 300 Typ. -55 ~ +150 Max. 0.1 0.1 0.1 400 0.3 0.95 UNIT V V V A V V MHz TEST CONDITIONS IC = 1 mA, IB = 0 A IC = 100 A, IE = 0 A IE = 100 A, IC = 0 A VCB = 60 V, IE = 0 A VCE = 40 V, IB = 0 A VEB = 5 V, IC = 0 A VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 50 mA IC = 50 mA, IB = 5 mA IC = 50 mA, IB = 5 mA VCE = 20 V, IC = 10 mA f = 100 MHz - CLASSIFICATION OF hFE(1) Rank Rang O 100 ~ 200 Y 200 ~ 300 G 300 ~ 400 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2N3904 Elektronische Bauelemente NPN Silicon General Purpose Transistor TYPICAL CHARACTERISTICS DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 275 10 < t1 < 500 ms t1 +3 V +10.9 V 275 10 k CS < 4 pF* DUTY CYCLE = 2% 0 -0.5 V < 1 ns CS < 4 pF* -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C +25C VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 -55C 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) DC Current Gain http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2N3904 Elektronische Bauelemente NPN Silicon General Purpose Transistor VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.01 IC = 1.0 mA 10 mA 30 mA 100 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Collector Saturation Region 1.2 1.0 V, VOLTAGE (VOLTS) 0.8 TJ = 25C 1.0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C) 0.5 0 -0.5 -1.0 -1.5 qVB FOR VBE(sat) 0 20 40 60 80 100 120 140 160 180 200 -55C TO +25C +25C TO +125C qVC FOR VCE(sat) -55C TO +25C +25C TO +125C VBE @ VCE =1.0 V 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 VCE(sat) @ IC/IB =10 -2.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) "ON" Voltages Temperature Coefficients http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3 |
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